Abstract
It is established that ion implantation in combination with annealing makes it possible to produce regularly arranged nanocrystalline phases and continuous films of metal silicides in the surface region of Si. It is shown that silicide nanocrystals and nanofilms crystallize in the cubic lattice. A model of a Si surface with silicide nanocrystals is developed.
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Schedule a callMore From: Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques
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