Abstract
An epitaxially stabilized Ir-silicide phase was grown in ultrathin two-phase films on Si(001). Using transmission electron microscopy it was found to have the fluorite structure. Due to the misfit between this epitaxially stabilized phase and the silicon substrate, elastic and plastic strain relaxation can be observed. Optoelectronic measurements of transmission, resistivity, and Schottky barrier height show a transition from infrared absorbing to infrared transparent films depending on thickness and reaction temperature. First-principles calculations confirm the experimental data on the structure and electronic properties of fluorite-type Ir disilicide.
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