Abstract
Amorphous Ge 100- x Pd x alloy films are prepared with an Ar-ion-beam sputtering technique over wide ranges of compositions (0≤ x ≤49.4 and 73.3≤ x ≤80.7). Their atomistic structures are studied with a grazing-incidence X-ray diffraction technique. The first-neighbour interatomic distance, r 1 , and the coordination number, N 1 , are evaluated from the analysis of total radial distribution function, R D F ( r ), derived from the diffraction data. For low Pd concentrations ( x x c ). The metal-insulator transition (Anderson transition) takes place at 10.2< x c <11.5 in this system.
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