Abstract
Morphology and electron-transport properties in the photoresist-silicon structures implanted by 60 keV antimony in the fluence range 1 × 10 ÷ 5 × 10 cm−2 with the ion current density 4 μA/cm have been investigated. Microhardness increases with the increasing fluence. Non-monotonous dependence of microhardness on the depth in the implanted structures was observed. Transition from insulating to the metallic regime of conductivity was not observed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
