Structure and electrical properties of double-walled silicon nanotubes depending on 585 defects and applied electric fields by SCC-DFTB method

Abstract

The geometric structural and electronic properties of 585 defective double-walled silicon nanotubes (DWSiNTs) by using the self-consistent charge density functional tight-binding (SCC-DFTB) method. Furthermore, we investigated the impact of external electric field and intensity on the electronic properties. After the relaxation of perfect tubes, the structure of the tube changes significantly, and the winding direction of the tube wall changes. The buckling value of the tube wall is most closely related to the geometric shape and atomic arrangement order of tubes. The overall stability of zigzag tubes is higher than armchair tubes, and (6,6)@(10,10) stability is significantly affected by defects. The partially defected zigzag tubes change from direct band gap semiconductor properties to indirect band gap semi-metal properties. A transformation of the semiconductor-semimetal properties, direct-indirect band gap of DWSiNTs is realized. The charge transfer amplitude of the defect tubes is greater than the perfect tube. The applied electric field makes the stability of all tubes decrease linearly, and the stability of the defect tubes is higher than the perfect tube. Part of the electric field strength changes the defect tubes from semiconductor properties to semi-metal properties, and semi-metal properties to metal properties. These theoretical studies provide a reference for the preparation and future application of DWSiNTs.