Abstract
CuAlO2 (CAO) thin films were prepared on quartz glass substrates by sol–gel spin-coating method. The effects of annealing temperatures, concentrations of sols and Al/Cu atomic ratios on structure, morphology and electrical properties have been investigated. It was found that CAO film with an Al/Cu atomic ratio of 0.8 approximately and the total metallic ion concentration of 0.7 M after heat treatment at 750 °C for 3 h in argon gas flow of 450 mL/min exhibited the lowest room temperature resistivity of 13.5 Ωcm.
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