Abstract
ABSTRACTThe 1-nm-wide Bi nanoline has been proposed as a possible template for the growth of very-high-density arrays of atomic-scale nanowires, grown epitaxially on the technologically important Si(001) surface. Indium reacts with the Bi dimers, forming a unique zigzag atomic chain structure. Simulations of the appearance in STM of the lowest-energy isomer of this structure match experimental filled-states images. Calculation of the LDOS for the single-layer islands, finds that the nanowires are semiconducting, with a band gap smaller than that of the substrate, in good agreement with STS. A delocalised LUMO state is created, which may provide a conduction pathway along the nanowire. We have performed dual-probe STM conduction measurements along the In-Bi nanowires to test this prediction.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
