Abstract
Epitaxial and stoichiometric films were prepared by reactive pulsed laser deposition (RPLD) with YAG:Nd laser on sapphire substrates. The film stoichiometry and structure were characterized by AES, XRD, RBS/channelling and XRD pole figures. It was found that epitaxially crystalline and nearly stoichiometric films with x of 0.96 on (0001) had been prepared by YAG:Nd laser at with the mixed gas of nitrogen and 3% hydrogen at 2 mbar. Three methods, XRD, AES and RBS/channelling, surely confirm the nearly stoichiometric crystalline characteristics of the films. The XRD pole figures show the films have twinned structure. The electrical property relationship with the temperature in the range of 16 to 300 K has been measured by conventional four probe methods.
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