Abstract
Structure and dielectric properties have been investigated for CaCu3Ti4O12 (CCTO) ceramics prepared by rapid sintering with relatively high sintering temperature and very short holding time. A very small amount of CuO is observed in XRD patterns of CCTO ceramics. Surface SEM of CCTO ceramics exhibits large grain and intergranular phase. Complex impedance spectra indicate that the internal barrier layer capacitor (IBLC) microstructure has been formed in the CCTO ceramics. And a giant dielectric permittivity of 8.5 × 103 at 1 kHz is achieved for the CCTO ceramics sintered at 1130 °C for 30 min. The rapid sintering method may be effective in applying these ceramics, which are expected to facilitate IBLC microstructure.
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