Abstract
Cross-sectional transmission electron microscopy (X-TEM) and scan-TEM areperformed to study how the structural properties of InAs/GaAs quantumdots (QDs) are affected when capped by an InGaAs and InAlAs combinationlayer (CBL), which currently is one of the most promising active regions for a1.3 µm QD laser. GaAs capping causes leveling of the QDs, which is suppressed by theintroduction of an InGaAs and InAlAs CBL. Scan-TEM results show that the CBLsignificantly suppresses In segregation and In–Ga intermixing during the capping process.Therefore, the height and In concentration in the buried QDs remain larger than thatof GaAs capped QDs, leading to the enhanced optical properties of InAs QDs.
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