Abstract
The structure of SiO x materials and the chemical stability of Si n+ ( n<4) species have been investigated experimentally by photoemission and X-ray absorption spectroscopy. SiO x thin films and interface systems formed by small amounts of SiO x deposited on different substrates (Cu(1 0 0), TiO 2(1 1 0), Al) have been studied. Theoretical analysis based on quantum mechanical calculations and cluster models have permitted to account for the stability of the different Si n+ chemical states and for some disproportionation reactions observed under certain experimental conditions.
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