Abstract
The structure and chemical composition of grain boundaries in GaSb<Mn> magnetic semiconductors have been investigated. We determined that quenching of the GaSb melt with 2% Mn results in the formation of a textured polycrystal (111). The grain boundaries of the texture are formed by split 60 degree dislocations with <110> dislocation lines. Microinclusions based on the ferromagnetic compound MnSb are located on the stacking faults of split dislocations. The chemical compositions of microinclusions differ, but their average composition is close to Mn1.1Sb. The synthesized GaSb<Mn> is a soft ferromagnet with a coercive force of 10 Oe and a magnetic state approaching superparamagnetic
Highlights
The production of spintronic devices requi res materials that have both magnetic and semiconductor properties and are technologically compatible with common semiconductor devices
All these studies employed the latest technologies, including molecular-beam epitaxy (MBE), laser irradiation, ion implantation, etc. They did not manage to overcome the low solubility limit of manganese, because, according to the results of the studies, at room temperature and above ferromagnetism of AIIIBV is explained by the formation of microinclusions based on Mn-V magnetic compounds [2,3,4,5,6,7,8,9,10,11,12,13,14,15,16]
In [16], we suggested that dislocations in semiconductors doped with magnetic impurities can be used as extensive linear magnetic circuits aligned in the same crystallographic direction
Summary
The production of spintronic devices requi res materials that have both magnetic and semiconductor properties and are technologically compatible with common semiconductor devices. A large number of studies have focused on the search for new magnetic semiconductors in the form of solid solutions of manganese in III–V compounds, i.e. dilute magnetic semiconductors (DMS) [1]. All these studies employed the latest technologies, including molecular-beam epitaxy (MBE), laser irradiation, ion implantation, etc. Cluster magnetic semicon ductors have certain advantages over dilute magnetic semiconductors These materials are of practical importance since its is possible to control their magnetic properties by modifying the composition, the size, and the concentration of the forming magnetic microinclusions without using expensive technologies. The article presents the results of the study of the structure and chemical composition of grain boundaries in GaSb obtained by melt quenching
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