Abstract
Large-scale Mg-doped GaN nanowires were synthesized by ammoniating Mg∶Ga2O3 thin films at 850 ℃ which were deposited on the Si substrate using the resembling Delta doping method. These GaN nanowires were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), Fourier transformed infrared (FTIR) spectroscopy and high resolution transmission electron microscopy (HRTEM). The results indicated that nanowires were hexagonal wurzite GaN single crystals. The diameter of nanowires was in the range of 35-50 nm with lengths of up to several tens of micrometers.
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