Abstract
A series of Dy3+ and Eu3+ implanted AlN films grown by HVPE method were prepared. The crystal structure, cathodoluminescence spectra, energy transfer mechanism and chromaticity properties of films were investigated. X-ray diffraction and Raman scattering show the similar trend of stress which increases first and then decreases and saturates at last. According to the cathodoluminescence spectra, there may be an energy transfer process from Dy3+ to Eu3+, which is identified to be the electric quadrupole-quadrupole interaction. Through changing the fluence of Eu3+ respect to Dy3+, the luminescence color of AlN films can be effectively controlled.
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