Abstract
AbstractThe stability and opto-electric properties of a-Si:H films fabricated by “chemical annealing (CA)” with excited states of He (He*) were systematically investigated. The films made by the CA mode showed a high photoconductivity due to a low level of defect density, 2×1015cm-3, and improvement in the stability against light soaking. A marked improvement was also found in the hole-transport in films fabricated by the CA. The structural relaxation on the growing surface was also enhanced by addition of a small amount of Ge.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
