Structure and Annealing Behavior of Metal Films Deposited on Substrates near 80 °K: I. Copper Films on Glass

Abstract

An in situ x-ray investigation of copper films has been carried out. Films were deposited on glass at 80 °K and room temperature in high vacuum. Measurements were made on the as-deposited films as well as after annealing at temperatures up to 200 °C. Values for the stacking fault and twin fault densities, particle sizes, and strain in these films have been obtained. The presence of preferred orientations and grain growth during annealing was also studied.