Abstract
The influence of structure variation on the1/f noise of nanometric boron doped hydrogenated polymorphous silicon (pm-Si:H)films was investigated. The films were grown by the conventional radiofrequency plasma enhanced chemical vapor deposition (PECVD) method.Raman spectroscopy was used to reveal the crystalline volume fraction(Xc) and crystal size of the pm-Si:H. The measurement of optical and structure properties wascarried out with spectroscopic ellipsometry (SE) in the Tauc–Lorentz model. AFourier transform infrared (FTIR) spectrometer was used to characterize thepresence of nanostructure-sized silicon clusters in pm-Si:H film deposited on KBrsubstrate. The electrical properties of the films were measured using evaporatedcoplanar nickel as the electrode. A semiconductor system was designed to obtain the1/f noiseof pm-Si:H film as well as that of amorphous and microcrystalline silicon films. The results demonstratethat the 1/f noise of pm-Si:H is nearly as low as that of microcrystalline silicon and much lowerthan that of amorphous silicon. The disorder to order transition mechanism ofcrystallization was used to analyze the decrease of noise compared with amorphoussilicon.
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