Abstract
AbstractThe island growth of SiCGe films on SiC at different temperatures has been investigated by SEM and transmission electron microscope (TEM). The island growth of SiCGe thin films depends on the processing parameter such as the growth temperature and follows the Stranski‐Krastanov (SK) mode. When the growth temperature is comparatively low, the thin film has two types of islands: one is a SiGe sphere‐like island of diamond‐cubic structure; another is a SiCGe cascading triangular island of zinc‐blende structure. As the growth temperature increases, the quantity of the sphere‐like islands reduces, while that of the cascading triangular islands increases. When the growth temperature is about 1060 °C, only cascading triangular islands are observed on the surface of the thin film, and the thickness of the 2D interfacial growth layer formed at the initial stage of the growth process is about 40 nm, which is twice of that grown at low temperature. Copyright © 2008 John Wiley & Sons, Ltd.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
