Abstract
Half-infinitely-wide ferromagnetic stripe and nanosized Schottky-metal stripe can be experimentally assembled on surface of GaAs/AlxGa1-xAs heterostructure, fabricating a hybrid semiconductor nanostructure, which was recently proven to act as an electron-momentum filter (a type of emerging nanoelectronics device). With the help of atomic-layer doping technique, a tunable δ-potential can be intentionally embedded inside the device. Because the inclusion of δ-doping does not clear two-dimensional characteristic of electron motion, an obvious wave vector filtering (WVF) effect still appears. Moreover, the effective potential experienced by electron in the semiconductor nanostructure is closely related to the δ-doping, therefore, a structurally-controllable electron-momentum filter with a tunable WVF efficiency by weight or position of the δ-doping can be obtained for nanoelectronics device applications.
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