Abstract
Simultaneous realization of high values of open circuit voltage (Voc), fill factor (FF), and energy conversion efficiency (η) in wide-gap CuGaSe2 (CGS) solar cells has long been one of the most challenging issues in the realm of chalcopyrite photovoltaics. In this communication, structural tuning of CGS thin films by means of controlling the amount of Se flux used during CGS film growth and improvements in solar cell performance (Voc > 0.9 V, FF > 0.7, and η > 10%) are demonstrated. Systematic variations in CGS film properties with the Se flux and correlation with device properties are shown. The unique CGS thin-film growth kinetics, which are different from narrow-gap Cu(In,Ga)Se2, are also presented and discussed. This development of double digit efficiency for CGS solar cells opens a new frontier for the broad application of a new class of chalcopyrite-based devices. Copyright © 2014 John Wiley & Sons, Ltd.
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