Abstract
This paper reports a spontaneous method of controlling the growth modefrom vertically arrayed ultra-slim MgZnO nanowires to nanowalls throughthe in-plane random motion of the seed crystals formed by surface phaseseparation. Seed crystals with a relatively Zn-rich phase were formed by thesimultaneous injection of Mg and Zn and became strongly networked when theZn/Mg flux ratio was increased at high temperatures, leading to the formation of MgZnOnanowalls on various conducting substrates. The hydrogen sensing performance of theMgZnO nanowalls with a two-dimensional network structure was superior to that of theone-dimensional MgZnO nanowires. Based on the microstructural characterizations, thegrowth procedure for the structural transition from MgZnO nanowires to nanowalls on theSi substrates was proposed.
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