Abstract
A flux growth technique for synthesizing Ga1-xNixBO3 single crystals with x up to 0.0012 has been developed. Nickel vs. gallium contents and lattice parameters of synthesized crystals have been determined by X-ray fluorescence and X-ray diffraction (XRD) analysis, respectively. It has been found that with increasing nickel contents another crystalline phase appears. XRD studies have shown that this phase corresponds to NiGa2O4 spinel.
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