Abstract
Structural transformations are examined by the employment of Raman scattering measurements for amorphous Se-rich As x Se1−x (0 ≤ x ≤ 0.2) alloys. It is found that the molecular structure of amorphous Se (a-Se) on the scale of medium-range order differs from the structure of most inorganic glasses and may be placed between 3-dimensional network glasses and polymeric ones. Further experiments show the existence of successive phases in laser-induced glass—crystalline transition with pronounced threshold behavior. By comparing peak width, peak location and Raman intensity in the range of bond modes it is derived that the changes occur not monotonically with increasing As content. The composition-induced changes of the spectra are explained by cross-linking of Se chains. Under laser irradiation, the changes in the optical transmission, holographic recording properties and Raman spectra of amorphous As x Se1−x films with 0 < x ≤ 0.2 have been examined. The dependence of the transmissivity and diffraction efficiency on the irradiation energy density shows two qualitatively different regions. Below the energy density threshold, E th, only small changes in the local structure of the system can be detected. In the low-energy region, transient changes in transmissivity are observed. Qualitative explanation of this behavior may be based on associating such with alternating of deep defect states. Above E th, the changes were attributed to crystallization transformation. The corresponding Raman spectra reveal transformation of the system from amorphous into the crystalline phase under laser irradiation. Although several articles and texts have provided reviews on various properties and applications of chalcogenide glasses, there is no thorough study of local atomic structure and its modification for Se-rich amorphous As x Se1−x . The present paper is concerned with this problem.
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More From: Journal of Materials Science: Materials in Electronics
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