Abstract
Low energy electron diffraction (LEED), Auger electron spectroscopy (AES) and scanning tunnelling microscopy (STM) have been used to study the evolution of the surface structure upon room temperature deposition of In onto In-predeposited Si(111)√3 × √3-In surface. The sequential formation of the Si(111)2 × 2 and Si(111)√7 × √3 surface phases has been detected and coverage ranges of their existence have been determined. STM observations have revealed that the Si(111)2 × 2-In phase has a honeycomb-like atomic structure with depressions in T 4 positions. The structural model built of In trimers has been proposed. The “low-temperature” Si(111)√7 × √3-In phase shows up in STM images as parallel rows of protrusions and its structure has been found to differ from the structure of the known “high-temperature” Si(111)√7 × √3-In phases. The inheritance of the defects at the structural transition from √3 × √3 structure to 2 × 2 structure has been discussed.
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