Abstract
The studies of the structural transformation of BiSbTeSe2 topological insulator during Co deposition were carried out. It was shown that Co, being deposited on BiSbTeSe2(0001) at 330°C, substantially modifies topmost part of the substrate. Reciprocal space mapping studies using RHEED data analysis reveal formation of the well-ordered layer with the modified composition and crystalline structure. It was found that this layer consists of three orthorhombic structural domains oriented at 120° to each other. Each domain has Pmnn space group characteristic fot CoTexSe2-x. The lattice parameters and epitaxial relations were found.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
