Structural transformation of Si-rich SiNx film on Si via swift heavy ions irradiation

Abstract

The effects of 200 MeV-Xe+ irradiation with fluencies of (109–1014) cm−2 on the phase-structural transformation of Si-rich SiNx film deposited on Si substrate by low-pressure chemical vapor deposition have been reported. It has been shown from Raman scattering data that the swift heavy ions irradiation results in the dissolution of amorphous Si nanoclusters in nitride matrix. It has been shown, too, that the swift heavy ion irradiation leads to quenching a visual photoluminescence from nitride films.