Abstract
X-ray diffraction and calorimetric investigations were performed for 80GeS2-20Ga2S3, 82GeS2-18Ga2S3 and 84GeS2-16Ga2S3 chalcogenide glasses. It is shown that structure of these glasses is characterized by short range ordering. It is established that Ga2S3 and GeS2 phases can be crystallized in Ge-Ga-S system. Transformation of voids in crystallized (80GeS2-20Ga2S3)100-х(СsCl)x, x = 0; 5; 10; 15 chalcogenide glasses was studied by positron annihilation lifetime spectroscopy. The CsCl content in GeS2-Ga2S3 glassy matrix changed the defect-related component in positron lifetime spectra and confirmed the structural void agglomeration in comparison with the base glass. A larger amount of CsCl in (80GeS2-20Ga2S3)85(СsCl)15 glass resulted in void fragmentation due to loosening of the structure.
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