Abstract
The effect of the degree of tellurium doping on the structural characteristics (average sizes of grains and growth figures) of bismuth films in the concentration range 0.005−0.15 at % Te and the thickness range 0.3−0.7 μm is studied. The thicknesses of the investigated films are measured by multi-beam optical interferometry. The amount of tellurium in the film is considered to be equal to that in the initial bismuth single crystal with a previously known tellurium concentration. Additional control of the tellurium content in the initial crystal is performed using a time-of-flight LYUMAS-30 mass spectrometer. To determine the average sizes of grains and growth figures, I use the technique developed by E.V. Demidov. The studies conducted reveal that an increase in the degree of tellurium doping in bismuth films leads to a significant decrease in the growth figures. The weak effect of annealing on the crystallite size in tellurium-doped bismuth films indicates the high temporal stability of their structures.
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