Abstract
The epitaxial realignment of undoped and As doped polycrystalline silicon films onto crystalline silicon substrates has been investigated. It is shown that under rapid thermal annealing treatments the polysilicon films can realign either by a columnar mode, i.e by the lateral growth of epitaxial columns, or by a planar mode, i.e. by the motion of the crystal-polycrystal interface towards the surface. The occurrence of either of the two modes depends on the morphology of the interfacial native oxide film, the microcrystalline structure of the layer and on the presence of dopant atoms dispersed in the layer.
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