Abstract
In Pd/Si multilayers grown by sputtering Pd and Si alternatively, Pd 2Si is formed during sputtering when the sublayer thickness of Pd is less than 2 nm, and no silicide is found when Pd sublayer is thicker. The transmission electron micrographs and electron diffraction patterns of Pd and Si single layers with various thicknesses show that thin Pd films 0.9–1.4 nm thick are island-like and all the Si films are homogeneous and amorphous. It is suggested that the sputtered Si particles carrying high energy can result in a big local temperature rise of the Pd islands and promote Pd and Si atoms to interdiffuse and react with each other to form Pd 2Si.
Published Version
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