Structural study of plasma enhanced chemical vapour deposited silicon carbide films

Abstract

The effect of the molar gas ratio ( X=C 2H 2/(C 2H 2+SiH 4)) and rf power on the structural properties of plasma enhanced chemical vapour deposited hydrogenated amorphous silicon carbide films has been investigated. The deposition rate was found to increase as either X or rf power increases. The value of n reduces as either X or the rf power increases. It was concluded that high carbon concentration increases the disorder in the film and increases the gap value. The IR results show SiC bond increases with an increase in rf power or a decrease in X. The value of SiH bond decreases and CH bond increases with increases in X. Annealing increases the SiC bond but reduces the SiH and CH bonds.