Abstract
Nucleation and growth of C0SÍ2 films obtained by thermal reaction of Co layers deposited onto (001)- and (111)-Si substrates are examined by Transmission Electron Microscopy (TEM), including High Resolution Electron Microscopy (HREM). On (001)-Si first a layer of CoSi is formed between Co and Si. Only thereafter the formation of COSi2 is initiated at the CoSi/Si interface. Apart from an aligned (a)-orientation, COSi2 occurs in a number of orientations close to and including a (110) CoSi2(b)- orientation. On (111)-Si the 180°-rotated -(B-orientation) is dominant. It is shown that these effects can be largely attributed to the geometrical lattice match between COSi2 and Si.
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