Abstract
We present the influence of post-growth annealing on crystallization process of amorphous CoFeB and tunneling magnetoresistance effect in polycrystalline CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs). The crystallization of amorphous CoFeB to bcc CoFe by annealing commences at the interface with the (001)-textured polycrystalline MgO layer. Then the bcc CoFe grows in grain-to-grain epitaxy mode by the 45{degree sign} rotation to reduce the lattice mismatch with MgO, in that the epitaxial relationship of CoFe(001)[110]//MgO(001)[100] is realized. This is suggested to be one of crucial prerequisites to obtain the giant TMR in the polycrystalline MTJs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
