Abstract
A soft X-ray emission spectroscopy (SXES) study under an energetic electron irradiation has been applied to a nondestructive buried interface analysis of a thin-film/Si (substrate) contact system, where the energy of primary electrons, E p, is less than 20 keV. An interesting point of this method is that we can have information on the valence band density of states (VB-DOS) for each wave function for each element constructing a material under study due to the dipole selection rule in an electron transition to give rise to a photon emission, which enables us to have a specific signal for an element to be used as a finger print, otherwise it is difficult. Also, we can study an interface buried deep in a rather thick overlayer e.g. more than a hundred nm, which is due to the fact that an X-ray production depth is much larger than the mean free path of an energetic electron. Electronic structural studies of silicides by SXES are also shown.
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