Abstract
Films of TiO2 were deposited using an ethyl hexoxide based metalorganic solution on sapphire substrates by employing the MOD method. Rutherford backscattering spectrometry (RBS) used for composition and thickness analysis of the films indicated that the films were stoichiometric. XRD and Raman spectroscopy showed anatase and rutile phases could be formed with appropriate annealing temperatures of 550°C and 700°C.12C(d,p)C13 nuclear reaction analysis indicated the presence of residual C in the MOD films. Ion channeling analysis indicated epitaxial growth of the film on sapphire only for very thin films. Significant diffusion of Ti atoms was also observed from the channeling spectra. Preliminary magnetic measurements indicated the possibility of ferromagnetic activity in these films when doped with iron and cobalt.
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