Structural studies of metal-semiconductor interfaces by means of surface extended X-ray absorption edge fine structure

Abstract

We report surface extended X-ray absorption edge fine structure (SEXAFS) studies of the early stages of Schottky barrier formation. Results will be presented for aluminum, silver and palladium on Si(111) 7 × 7 in the range from ${1 \over 3}$ monolayer to five monolayers. The SEXAFS signal reveals the local structure around the metal atoms in terms of bond lengths and coordination numbers. Complex ordered and disordered surface structures are observed ranging from weak reaction between the components (e.g. silver clusters on silicon) to strong reaction (e.g. Pd2Si formation). At elevated temperatures the Ag–Si interface is particularly interesting and consists of a well-defined ordered interface layer ( $\sqrt 3 \times \sqrt 3$ Ag on Si(111)) with silver clusters growing on top. While most other surface structural techniques fail to yield complete information the power of SEXAFS as a local structural technique becomes most apparent for such complex systems. Structure determinations for some metal-semiconductor interfaces will be presented.