Abstract
We have precisely investigated the crystal structure of various doped samples of (La 1− x Ca x O)Cu 1− x M x S ( M = Mn , Co, Ni, Zn) in order to understand changes of the electrical properties from a view point of the crystal structure. The distance between LaO and CuS layers along c-axis, d La–S increases with increasing electrical resistivity of (La 1− x Ca x O)Cu 1− x Ni x S and it approaches a value of insulating samples, (La 1− x Ca x O)Cu 1− x M x S ( M = Mn , Co, Zn). The changes of the electrical properties is considered to be due to the charge transfer between LaO and CuS layer which is caused by the change of d La–S .
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