Abstract
Raman scattering measurements have been performed on a series of a-Si:H/a-SiN x:H multilayer films with hydride layer thickness d varying from 8 – 90Å. The results show that with decreasing thickness the hydride layers become progressively more disordered. This increasing bond angle disorder is attributed to an additional distortion in the amorphous network near the interface which arises from the mismatch in the interatomic distances between a-Si:H and a-SiN x:H. A comparison of the results for the multilayers with those for thick films of a-Si and a-Ge shows that for small layer thicknesses the interface induced disorder can significantly affect the properties of the hydride layer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
