Abstract

We describe a method of carbon film synthesis on single-crystalline silicon substrate, which is based on methane pyrolysis in electric field. The calculated values of pressures and temperatures developed during the bombardment of substrates by C4− carbon ions in the course of pyrolysis amount to P ∼ 1.3 GPa and T ∼ 2300 K, respectively. These conditions lead to the formation of nucleation centers that are necessary for the growth of carbon film. Measurements show that the microhardness of obtained carbon films reaches 60–80% of the hardness of natural diamond. The structural state of the film material was studied by X-ray diffraction, electron microscopy, and atomic force microscopy. It is established that the synthesized films represent a composite material with a carbon matrix containing nanodimensional inclusions of another phase.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.