Abstract
(Ba,Sr)RuO 3 (BSR) electrodes were deposited on n-type Si (100) substrates by liquid-delivery metalorganic chemical vapor deposition (LDMOCVD) and their stability in a hydrogen ambient was investigated. BSR films showed the structural and morphological stability when annealed in hydrogen forming gas (4 % H 2 +96% balance N 2 ) temperatures of up to 500 . The abrupt increase of resistivity with increasing hydrogen annealing temperature can be attributed to oxygen loss in BSR films without phase change and was completely recovered by annealing at 700 in an O 2 ambient. The dielectric constant of the Pt/BSR/BST/Pt structures increased with increasing BSR interfacial layers. The dielectric constant of a BSR/BST/Pt capacitor with a 35 nm thick BST without top Pt electrode showed about 425.
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