Abstract
A study of the stress relaxation caused by post-deposition thermal annealing of carbon nitride thin films (CN x ) deposited onto Si substrates has been carried out. The intrinsic stress values were correlated with Fourier transform spectrometer (FTIR) and thermal desorption mass spectroscopy (TDMS) results. FTIR spectra showed the existence of N–Csp 3, N Csp 2 and C≡N triple bonds in the deposited films and indicates the occurrence of their porous character. The analysis of the spectra versus annealing temperature ( T A) reveals two rearrangement mechanisms of the microstructure. Up to 200 °C, the reversion of N Csp 2 to N–Csp 3 and C Csp 2 respectively, and then an increase of the connectivity of the C–C network for higher T A. These dissociation/recombination mechanisms are used to describe the stress release occurring within the (CN x ) films upon heating.
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