Abstract
Thermal relaxation of Si–O–Si bond angle has been studied in 1 MeV B +-ion, 1 MeV O +-ion and 4 MeV Ni 2+-ion implanted silica glasses by infrared reflection and visible and near-infrared reflection spectroscopy. It is found that the change in Si–O–Si bond angle is not proportional to the change in molar volume upon annealing. It is deduced that the relaxation mechanism of Si–O–Si bond angle accompanied by little density change has an activation energy of about 100 kJ mol −1.
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