Abstract
CdSe is II-VI semiconductor with compact hexagonal structure. It has a band gap of 1.82 eV and a high stopping power for nuclear radiation. Single crystalline CdSe ingots were grown by Physical Vapor Transport (PVT) employing a horizontal reactor. As devices critically depend on material properties its single crystalline quality was determined by chemical etching and transmission electron microscopy. Results were compared to those corresponding to Bridgman High Pressure (HPB) grown material and also to PVT material grown in a vertical reactor. Keywords: Single crystalline CdSe ingots, PVT, HPB, Chemical etching, Optical Microscopy, Transmission and scanning electron microscopy.
Highlights
Single crystalline CdSe ingots were grown by Physical Vapor Transport (PVT) employing a horizontal reactor
As devices critically depend on material properties its single crystalline quality was determined by chemical etching and transmission electron microscopy
Results were compared to those corresponding to Bridgman High Pressure (HPB) grown material and to PVT material grown in a vertical reactor
Summary
Cadmium Selenide (Space Group: P63mc (186), a=4.30Å, c=7.01Å)) is mainly employed for nuclear radiation detectors operating at room temperature [1], nonlinear optical devices [2] and as substrate for epitaxial growth [3]. In order to obtain a good quality single crystalline material, it is necessary to optimize growth conditions, to advance in the knowledge and understanding involved in the mass transfer processes and in the diffusive and convective effects [8,9]. Detectors and optical devices quality of different semiconductors critically depend on the material characteristics [10]. It is important to study the structural quality of this material by transmission electron microscopy as well as to determine dislocations density and angular misorientation between contiguous subgrains [11].The importance of this investigation resides in refining the well known PVT method in order to get high quality
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