Abstract
Zinc oxide thin films have been grown on c-cut (0001) and r-cut (1 1¯ 0 2) sapphire substrates by pulsed-laser deposition using a Nd:YAG laser operating at 355nm in picosecond regime (pulse duration: 42ps). The composition and the structural properties of the films have been investigated by scanning electron microscopy, Rutherford backscattering spectroscopy and X-ray diffraction according to different substrate temperatures. The RBS spectra show a Zn/O ratio close to 1.1 with a constant in-depth oxygen concentration. The XRD diagrams in Bragg–Brentano geometry display a preferred orientation depending on the used substrate. The large width of XRD peaks is indicative of a small coherence length. In addition, according to the pole figures recorded in asymmetric configuration, epitaxial relationships between substrate and film are evidenced. An increase in the substrate temperature leads to a film crystalline quality improvement. The results are discussed regarding the well-known properties of ZnO films obtained by nanosecond and femtosecond PLD.
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