Structural Properties of Γ-Phase Copper (I) Iodide Nano-Structured Thin Films Prepared by Sol Gel Method

Abstract

Combination of potassium iodide (KI) and copper sulfate (CuSO4) as prepared solution at room temperature to produced p‐type conductivity γ‐phase copper (I) iodide thin film have been studied. The solution was first prepared by simple calculation of both concentrations and disolved in certain amount of water. Mixing both liquid produced CuI precipitate where then disolve in acetonitrile which resulting CuI solution. This solution then deposited in silicon and glass substrates by spin coating technique to make CuI thin film. In order to study further details of it crystalline behaviour, annealling temparature was conducted at 4 different stages which are as deposited, 50°, 100° and 150°. The results were examined by X‐ray Diffraction (XRD) for their atoms arrangement within CuI crystalline, Scanning Electron Microscope (SEM) for surface morphology and Energy dispersive X‐ray spectroscopy (EDXS) for chemical characterization. Results showed that the chemical compound tested were purely copper iodide element.