Abstract
In this paper, a simple method is reported to obtain nitrogen-doped p-ZnO film. In this method NH3 plasma, generated in a plasma-enhanced chemical vapor deposition system, was employed to treat ZnO thin film. By hall-effect measurement a p type conductivity was observed for the treated film with the hole density of 3.6×1016. XPS result confirmed nitrogen was incorporated into ZnO film during the treatment process to occupy the oxygen positions.
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