Structural Properties of Low Temperature Silicon Oxide Films Prepared by Remote Plasma‐Enhanced Chemical Vapor Deposition

Abstract

High structural quality silicon dioxide films have been prepared by the remote plasma‐enhanced chemical vapor deposition technique using silicon tetrachloride and oxygen as source materials, at substrate temperatures lower than 200°C. In addition to the source gases, hydrogen was fed into the deposition chamber. The role of the gas is to react with the chlorine from the decomposition forming vapor which is removed from the deposition chamber. The role variations in the substrate temperature, plasma power and oxygen, hydrogen, silicon tetrachloride, and argon flow rates have on the oxide quality are analyzed. The samples were characterized by IR spectroscopy, ellipsometry, chemical etch rate, and Auger electron spectroscopy (AES) measurements. Silicon dioxide films of suitable quality have been prepared at substrate temperatures as low as 50°C. Samples prepared at this temperature with low deposition rates show good structural characteristics, such as refractive index, chemical etch rate, and composition near to that of the stoichiometric oxide.