Abstract
The crystal structure of Cr 0.87Ga 1.80S 4 ( a = 3.640(2)Å; c = 12.037(4)Å; Z = 1; space group P 3m1 ) has been refined to a final R = 0.085 with 308 independent reflections. The sulfur stacking sequence is hhhh in type, with Cr atoms occupying the octahedral voids and Ga atoms the tetrahedral voids. Vacancies are distributed within all sheets of the lattice. The trigonal distortion ϵ of the octahedral sites has been determined by EPR investigations.
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