Abstract
High-resolution X-ray diffraction has been used for the structural characterization of hetero- and homoepitaxial ZnSe-based laser structures. A common problem of both kinds of conventional laser structures containing sulphur is the formation of composition gradients in the thick quaternary layers. In addition to depth gradients within the single cladding layers, a composition shift between the n-type and the p-type side of the laser structures has been observed. Clear differences between homoepitaxial and heteroepitaxial samples were found with respect to the strain relaxation.
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