Abstract
AbstractThe structural properties of GaN and Ga1–x Mnx N layers are reported. The GaN and Ga1–x Mnx N layers were obtained by the sublimation sandwich method (SSM). Electron microprobe measurements detected high Mn concentration of up to 4.0 at% in Ga1–x Mnx N materials. Raman investigations demonstrated that the prepared layers had a well‐ordered structure. The densities of dislocations in the template MOCVD layer, SSM GaN layers and SSM Ga1–x Mnx N layers were 3.9 × 108 cm–2, 1.4 × 108 cm–2 and 3.0 × 109 cm–2, respectively. The AFM studies demonstrated that the GaN RMS roughness increased with the increase in thickness. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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